Self-ordering of nanofacets on vicinal SiC surfaces.

Instructions for use Title Self-Ordering of Nanofacets on Vicinal SiC Surfaces

Self-assembling and self-ordering of Ge islands on vicinal Si(001) surfaces

Fabrication of semiconductor quantum dot structures with a regular in-plane spatial distribution and optimum size uniformity is highly desirable for applications of their novel optical and electronic properties. This remains a challenging subject, especially on the nanometer scale. The strain-driven self-assembled formation of Ge islands on Si during molecular beam epitaxy (MBE) in the Stranski...

Step-step interaction on vicinal Si(001) surfaces studied by scanning tunneling microscopy

We report on measurements of step-step interaction on a flat Si 111 7 7 surface and on vicinal Si 001 surfaces with miscut angles ranging between 0.2° and 8°. Starting from scanning tunneling microscopy images of these surfaces and describing steps profile and interactions by the continuum step model, we measured the self-correlation function of single steps and the distribution of terrace widt...

Controlled surface functionalization via self-selective metal adsorption and pattern transformation on the vicinal Si(111) surface

We demonstrate a self-selective metal adsorption and pattern transformation process on vicinal Si 111 surfaces. When Au atoms are deposited onto the self-organized periodic Si 111 surface patterns, the Au atoms self-select to adsorb predominantly onto one of the two distinct domains, the Si 111 terrace or the stepbunched facet at different Au coverage. This leads to a systematic transformation ...

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

The strain of GaN layers grown by Metal Organic Chemical Vapor Deposition (MOCVD) on three vicinal 4H-SiC substrates (0, 3.4 and 8 offcut from [0001] towards [11-20] axis) is investigated by X-ray Diffraction (XRD), Raman Scattering and Cathodoluminescence (CL). The strain relaxation mechanisms are analyzed for each miscut angle. At a microscopic scale, the GaN layer grown on on-axis substrate ...